Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSATMA1

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Subtotal (1 pack of 2 units)*

R 39,96

(exc. VAT)

R 45,96

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 19.98R 39.96
10 - 98R 19.48R 38.96
100 - 248R 18.895R 37.79
250 - 498R 18.14R 36.28
500 +R 17.415R 34.83

*price indicative

Packaging Options:
RS stock no.:
241-9697
Mfr. Part No.:
BSZ018NE2LSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Series

BSZ

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which has Pb-free lead plating. It is optimized for high performance Buck converter.

Very low on-resistance

Qualified according to JEDEC for target applications

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