Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSATMA1

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Subtotal (1 pack of 2 units)*

R 47,05

(exc. VAT)

R 54,108

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 23.525R 47.05
10 - 98R 22.935R 45.87
100 - 248R 22.245R 44.49
250 - 498R 21.355R 42.71
500 +R 20.50R 41.00

*price indicative

Packaging Options:
RS stock no.:
241-9697
Mfr. Part No.:
BSZ018NE2LSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Series

BSZ

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which has Pb-free lead plating. It is optimized for high performance Buck converter.

Very low on-resistance

Qualified according to JEDEC for target applications

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