Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ039N06NSATMA1

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Subtotal (1 pack of 2 units)*

R 64,03

(exc. VAT)

R 73,634

(inc. VAT)

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In Stock
  • 5,000 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 32.015R 64.03
10 - 98R 31.215R 62.43
100 - 248R 30.28R 60.56
250 - 498R 29.07R 58.14
500 +R 27.905R 55.81

*price indicative

Packaging Options:
RS stock no.:
241-9705
Mfr. Part No.:
BSZ039N06NSATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Series

BSZ

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS Power Transistor is a N channel MOSFET which is fully qualified according to JEDEC for Industrial Applications. It has Higher solder joint reliability due to enlarged source interconnection.

Optimized for high performance SMPS

Superior thermal resistance

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