onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1

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Subtotal (1 unit)*

R 215,87

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R 248,25

(inc. VAT)

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1 - 9R 215.87
10 - 99R 210.47
100 - 249R 204.16
250 - 499R 195.99
500 +R 188.15

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Packaging Options:
RS stock no.:
229-6444
Mfr. Part No.:
NTBG045N065SC1
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

650V

Series

SiC Power

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

105nC

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

242W

Forward Voltage Vf

4.8V

Maximum Operating Temperature

175°C

Length

10.2mm

Standards/Approvals

No

Width

4.7 mm

Height

9.4mm

Automotive Standard

No

The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Highest efficiency

Faster operation frequency

Increased power density

Reduced EMI

Reduced system size

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