SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin TO-247-4 onsemi NTH4L045N065SC1
- RS stock no.:
- 229-6459
- Mfr. Part No.:
- NTH4L045N065SC1
- Manufacturer:
- onsemi
On back order for despatch 2024/09/25
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 450)
R 194,235
(exc. VAT)
R 223,37
(inc. VAT)
| Units | Per unit | Per Tube* |
| 450 - 900 | R 194,235 | R 87 405,75 |
| 1350 - 1800 | R 189,379 | R 85 220,55 |
| 2250 + | R 183,698 | R 82 664,10 |
| *price indicative | ||
- RS stock no.:
- 229-6459
- Mfr. Part No.:
- NTH4L045N065SC1
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 55 A |
| Maximum Drain Source Voltage | 650 V |
| Series | SiC Power |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.05 Ω |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |