onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263
- RS stock no.:
- 229-6443
- Mfr. Part No.:
- NTBG045N065SC1
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 reel of 800 units)*
R 108 350,40
(exc. VAT)
R 124 603,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 1600 | R 135.438 | R 108,350.40 |
| 2400 - 3200 | R 132.052 | R 105,641.60 |
| 4000 + | R 128.091 | R 102,472.80 |
*price indicative
- RS stock no.:
- 229-6443
- Mfr. Part No.:
- NTBG045N065SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 242W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 4.8V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 242W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 4.8V | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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