onsemi SiC Power Type N-Channel MOSFET, 46 A, 650 V N, 4-Pin TO-247
- RS stock no.:
- 229-6462
- Mfr. Part No.:
- NTH4L060N090SC1
- Manufacturer:
- onsemi
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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 229-6462
- Mfr. Part No.:
- NTH4L060N090SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 84mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.9V | |
| Maximum Power Dissipation Pd | 221W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 84mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.9V | ||
Maximum Power Dissipation Pd 221W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.8mm | ||
Height 22.74mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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