onsemi SiC Power N-Channel MOSFET, 46 A, 650 V N, 4-Pin TO-247
- RS stock no.:
- 229-6462
- Mfr. Part No.:
- NTH4L060N090SC1
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 450 units)*
R 60 109,20
(exc. VAT)
R 69 125,40
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 450 - 900 | R 133.576 | R 60,109.20 |
| 1350 - 1800 | R 130.237 | R 58,606.65 |
| 2250 + | R 126.33 | R 56,848.50 |
*price indicative
- RS stock no.:
- 229-6462
- Mfr. Part No.:
- NTH4L060N090SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SiC Power | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 84mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 221W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 3.9V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Width | 5.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SiC Power | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 84mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 221W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 3.9V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Height 22.74mm | ||
Width 5.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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