onsemi SiC Power N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263 NTBG015N065SC1
- RS stock no.:
- 229-6442
- Mfr. Part No.:
- NTBG015N065SC1
- Manufacturer:
- onsemi
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View bulk pricing optionsSubtotal (1 unit)*
R 426,91
(exc. VAT)
R 490,95
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 426.91 |
| 10 - 99 | R 416.24 |
| 100 - 249 | R 403.75 |
| 250 - 499 | R 387.60 |
| 500 + | R 372.10 |
*price indicative
- RS stock no.:
- 229-6442
- Mfr. Part No.:
- NTBG015N065SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.7mm | |
| Length | 10.2mm | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.7mm | ||
Length 10.2mm | ||
Height 9.4mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Related links
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