Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 346,22

(exc. VAT)

R 398,155

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 375 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
5 - 5R 69.244R 346.22
10 - 20R 67.512R 337.56
25 - 95R 65.486R 327.43
100 - 495R 62.866R 314.33
500 +R 60.352R 301.76

*price indicative

Packaging Options:
RS stock no.:
228-2879
Mfr. Part No.:
SIHP21N80AEF-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

165.3A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

47nC

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Related links