Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

R 1 078,60

(exc. VAT)

R 1 240,40

(inc. VAT)

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Last RS stock
  • Final 850 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
50 - 50R 21.572R 1,078.60
100 - 200R 21.032R 1,051.60
250 - 450R 20.401R 1,020.05
500 - 950R 19.585R 979.25
1000 +R 18.802R 940.10

*price indicative

RS stock no.:
228-2880
Mfr. Part No.:
SiHP6N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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