Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 197,60

(exc. VAT)

R 227,25

(inc. VAT)

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Last RS stock
  • Final 860 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5R 39.52R 197.60
10 - 20R 38.532R 192.66
25 - 95R 37.376R 186.88
100 - 245R 35.88R 179.40
250 +R 34.444R 172.22

*price indicative

Packaging Options:
RS stock no.:
228-2881
Mfr. Part No.:
SiHP6N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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