Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3

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Subtotal (1 pack of 5 units)*

R 168,44

(exc. VAT)

R 193,705

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
Last RS stock
  • Final 860 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5R 33.688R 168.44
10 - 20R 32.846R 164.23
25 - 95R 31.86R 159.30
100 - 245R 30.586R 152.93
250 +R 29.362R 146.81

*price indicative

Packaging Options:
RS stock no.:
228-2881
Mfr. Part No.:
SiHP6N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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