Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3

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Subtotal (1 pack of 5 units)*

R 191,79

(exc. VAT)

R 220,56

(inc. VAT)

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Last RS stock
  • Final 860 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
5 - 5R 38.358R 191.79
10 - 20R 37.40R 187.00
25 - 95R 36.278R 181.39
100 - 245R 34.826R 174.13
250 +R 33.432R 167.16

*price indicative

Packaging Options:
RS stock no.:
228-2881
Mfr. Part No.:
SiHP6N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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