Vishay E Type N-Channel MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

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Subtotal (1 pack of 2 units)*

R 89,07

(exc. VAT)

R 102,43

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 44.535R 89.07
10 - 18R 43.42R 86.84
20 - 24R 42.115R 84.23
26 - 98R 40.43R 80.86
100 +R 38.815R 77.63

*price indicative

Packaging Options:
RS stock no.:
228-2837
Mfr. Part No.:
SIHA24N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

35W

Typical Gate Charge Qg @ Vgs

59nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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