Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

R 735,50

(exc. VAT)

R 846,00

(inc. VAT)

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In Stock
  • Plus 850 unit(s) shipping from 11 May 2026
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Units
Per unit
Per Tube*
50 - 50R 14.71R 735.50
100 - 450R 14.342R 717.10
500 - 950R 13.912R 695.60
1000 - 1950R 13.355R 667.75
2000 +R 12.821R 641.05

*price indicative

RS stock no.:
228-2839
Mfr. Part No.:
SiHA5N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

29W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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