Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3

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Subtotal (1 pack of 5 units)*

R 183,45

(exc. VAT)

R 210,95

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 36.69R 183.45
10 - 20R 35.772R 178.86
25 - 95R 34.698R 173.49
100 - 495R 33.31R 166.55
500 +R 31.978R 159.89

*price indicative

Packaging Options:
RS stock no.:
228-2840
Mfr. Part No.:
SiHA5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

29W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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