Infineon IPT60R Type N-Channel MOSFET, 75 A, 600 V Enhancement, 8-Pin HSOF IPT60R028G7XTMA1

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Subtotal (1 unit)*

R 263,84

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R 303,42

(inc. VAT)

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Units
Per unit
1 - 9R 263.84
10 - 99R 257.24
100 - 249R 249.52
250 - 499R 239.54
500 +R 229.96

*price indicative

Packaging Options:
RS stock no.:
222-4938
Mfr. Part No.:
IPT60R028G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

600V

Series

IPT60R

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

123nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

391W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

10.58 mm

Length

10.1mm

Height

2.4mm

Automotive Standard

No

The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

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