Infineon OptiMOS 3 N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF

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Subtotal (1 reel of 2000 units)*

R 136 524,00

(exc. VAT)

R 157 002,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000R 68.262R 136,524.00
4000 - 4000R 66.555R 133,110.00
6000 +R 64.559R 129,118.00

*price indicative

RS stock no.:
214-4423
Mfr. Part No.:
IPT111N20NFDATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Width

10.58mm

Standards/Approvals

No

Length

10.1mm

Height

2.4mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

It is RoHS compliant

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