Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF

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Subtotal (1 reel of 2000 units)*

R 143 112,00

(exc. VAT)

R 164 578,00

(inc. VAT)

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  • Shipping from 15 May 2026
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Units
Per unit
Per Reel*
2000 - 2000R 71.556R 143,112.00
4000 - 4000R 69.767R 139,534.00
6000 +R 67.674R 135,348.00

*price indicative

RS stock no.:
214-4423
Mfr. Part No.:
IPT111N20NFDATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

200V

Package Type

HSOF

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

65nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

2.4mm

Standards/Approvals

No

Width

10.58 mm

Length

10.1mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

It is RoHS compliant

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