Silicon N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 Infineon IPP60R120C7XKSA1
- RS stock no.:
- 222-4702
- Mfr. Part No.:
- IPP60R120C7XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)**
R 54 84
(exc. VAT)
R 63 06
(inc. VAT)
978 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 2 - 8 | R 27,42 | R 54,84 |
| 10 - 98 | R 26,735 | R 53,47 |
| 100 - 248 | R 25,935 | R 51,87 |
| 250 - 498 | R 24,90 | R 49,80 |
| 500 + | R 23,905 | R 47,81 |
**price indicative
- RS stock no.:
- 222-4702
- Mfr. Part No.:
- IPP60R120C7XKSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 | |
| Series | CoolMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.12 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Series CoolMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.12 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
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