Infineon CoolMOS Type N-Channel MOSFET, 16 A, 650 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 222-4704
- Mfr. Part No.:
- IPP60R145CFD7XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 1 774,95
(exc. VAT)
R 2 041,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | R 35.499 | R 1,774.95 |
| 150 - 200 | R 34.612 | R 1,730.60 |
| 250 + | R 33.574 | R 1,678.70 |
*price indicative
- RS stock no.:
- 222-4704
- Mfr. Part No.:
- IPP60R145CFD7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 145mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.95 mm | |
| Length | 10.36mm | |
| Height | 4.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 145mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 15.95 mm | ||
Length 10.36mm | ||
Height 4.57mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Related links
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-220 IPP60R145CFD7XKSA1
- Infineon HEXFET Silicon N-Channel MOSFET 100 V, 3-Pin IPAK IRFU3910PBF
- Infineon HEXFET Silicon N-Channel MOSFET 110 V, 3-Pin DPAK IRFR3910TRLPBF
- Vishay Dual Silicon N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8W SQSA82CENW-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3
- Infineon CoolMOS CP N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA60R199CPXKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA60R600P7XKSA1
- onsemi SUPERFET III N-Channel MOSFET 650 V, 3-Pin TO-220 NTPF190N65S3H