Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R180C7XKSA1

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Subtotal (1 pack of 5 units)*

R 288,78

(exc. VAT)

R 332,095

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • Plus 455 unit(s) shipping from 12 February 2026
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Units
Per unit
Per Pack*
5 - 5R 57.756R 288.78
10 - 95R 56.312R 281.56
100 - 245R 54.622R 273.11
250 - 495R 52.438R 262.19
500 +R 50.34R 251.70

*price indicative

Packaging Options:
RS stock no.:
222-4642
Mfr. Part No.:
IPA60R180C7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Qualified for standard grade applications according to JEDEC standards

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