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Infineon CoolMOS N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-220 IPP65R110CFDAAKSA1

RS stock no.:: 222-4706
Mfr. Part No.:: IPP65R110CFDAAKSA1
Manufacturer:: Infineon

Infineon CoolMOS N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-220 IPP65R110CFDAAKSA1

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Subtotal (1 tube of 50 units)*

R 3 893,05

(exc. VAT)

R 4 477,00

(inc. VAT)

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Units	Per unit	Per Tube*
50 - 100	R 77.861	R 3,893.05
150 - 200	R 75.914	R 3,795.70
250 +	R 73.637	R 3,681.85

*price indicative

RS stock no.:: 222-4706
Mfr. Part No.:: IPP65R110CFDAAKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	31.2A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	277.8W
	Typical Gate Charge Qg @ Vgs	110nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	900mV
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.36mm
	Width	15.95mm
	Height	4.57mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 31.2A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 277.8W
	Typical Gate Charge Qg @ Vgs 110nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 900mV
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.36mm
	Width 15.95mm
	Height 4.57mm
	Automotive Standard AEC-Q101

Datasheet - IPP65R110CFDAAKSA1

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

Infineon CoolMOS N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-220 IPP65R110CFDAAKSA1

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