Infineon CoolMOS Type N-Channel MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

R 1 742,25

(exc. VAT)

R 2 003,60

(inc. VAT)

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Temporarily out of stock
  • 950 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Tube*
50 - 100R 34.845R 1,742.25
150 - 200R 33.974R 1,698.70
250 +R 32.954R 1,647.70

*price indicative

RS stock no.:
222-4701
Mfr. Part No.:
IPP60R120C7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

92W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.36mm

Height

4.57mm

Width

15.95 mm

Automotive Standard

No

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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