Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 222-4641
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 1 568,70
(exc. VAT)
R 1 804,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 450 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | R 31.374 | R 1,568.70 |
| 150 - 200 | R 30.589 | R 1,529.45 |
| 250 + | R 29.672 | R 1,483.60 |
*price indicative
- RS stock no.:
- 222-4641
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Related links
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA60R180C7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPAW60R360P7SXKSA1
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA60R099P6XKSA1
- Diodes Inc N-Channel MOSFET 650 V, 3-Pin ITO-220 DMG9N65CTI
- ROHM N-Channel MOSFET 650 V, 3-Pin DPAK R6509KND3TL1
- ROHM N-Channel MOSFET 650 V, 3-Pin DPAK R6509END3TL1