Infineon OptiMOS-T2 Type N-Channel MOSFET, 86 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S405ATMA1
- RS stock no.:
- 218-3053
- Mfr. Part No.:
- IPD90N04S405ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 15 units)*
R 200,985
(exc. VAT)
R 231,135
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 11,205 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 13.399 | R 200.99 |
| 30 - 75 | R 13.064 | R 195.96 |
| 90 - 225 | R 12.672 | R 190.08 |
| 240 - 465 | R 12.165 | R 182.48 |
| 480 + | R 11.679 | R 175.19 |
*price indicative
- RS stock no.:
- 218-3053
- Mfr. Part No.:
- IPD90N04S405ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 65W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 65W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Related links
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
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- Infineon OptiMOS-T2 Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252