Infineon OptiMOS-T2 Type N-Channel MOSFET, 86 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S405ATMA1

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Subtotal (1 pack of 15 units)*

R 205,905

(exc. VAT)

R 236,79

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 13.727R 205.91
30 - 75R 13.383R 200.75
90 - 225R 12.982R 194.73
240 - 465R 12.463R 186.95
480 +R 11.964R 179.46

*price indicative

Packaging Options:
RS stock no.:
218-3053
Mfr. Part No.:
IPD90N04S405ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

29nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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