Infineon OptiMOS-T2 Type N-Channel MOSFET, 86 A, 40 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 16 352,50

(exc. VAT)

R 18 805,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 6.541R 16,352.50
5000 - 5000R 6.377R 15,942.50
7500 +R 6.186R 15,465.00

*price indicative

RS stock no.:
218-3052
Mfr. Part No.:
IPD90N04S405ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

65W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

29nC

Maximum Operating Temperature

175°C

Height

2.41mm

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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