Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD100N06S403ATMA2

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

R 191,96

(exc. VAT)

R 220,75

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,340 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 10R 19.196R 191.96
20 - 90R 18.716R 187.16
100 - 240R 18.155R 181.55
250 - 490R 17.429R 174.29
500 +R 16.732R 167.32

*price indicative

Packaging Options:
RS stock no.:
215-2502
Mfr. Part No.:
IPD100N06S403ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

128nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS®-T2 Power-Transistor has 100V maximum drain source voltage, N-Channel, Automotive MOSFET, with DPAK(TO-252)package.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

Ultra Low RDSon

Ultra High ID

Related links