Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S4L03ATMA2

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Subtotal (1 pack of 10 units)*

R 238,93

(exc. VAT)

R 274,77

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 23.893R 238.93
20 - 90R 23.296R 232.96
100 - 240R 22.597R 225.97
250 - 490R 21.693R 216.93
500 +R 20.825R 208.25

*price indicative

Packaging Options:
RS stock no.:
215-2520
Mfr. Part No.:
IPD90N06S4L03ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

170nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS®-T2 Power-Transistor has 60V maximum drain source voltage, N-Ch, Automotive MOSFET, with DPAK(TO-252) package.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Ultra low RDSon

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