Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S4L06ATMA1

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Subtotal (1 pack of 10 units)*

R 240,79

(exc. VAT)

R 276,91

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 24.079R 240.79
20 - 90R 23.477R 234.77
100 - 240R 22.773R 227.73
250 - 490R 21.862R 218.62
500 +R 20.988R 209.88

*price indicative

Packaging Options:
RS stock no.:
218-3055
Mfr. Part No.:
IPD90N10S4L06ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

75nC

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Height

2.41mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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