Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 AUIRFR540Z

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Subtotal (1 pack of 10 units)*

R 409,67

(exc. VAT)

R 471,12

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 40.967R 409.67
20 - 90R 39.943R 399.43
100 - 240R 38.745R 387.45
250 - 490R 37.195R 371.95
500 +R 35.707R 357.07

*price indicative

Packaging Options:
RS stock no.:
214-8953
Mfr. Part No.:
AUIRFR540Z
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

28.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

91W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

39nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.22mm

Height

2.39mm

Width

6.73 mm

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Automotive Qualified

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