Infineon OptiMOS-T Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 IPD35N10S3L26ATMA1

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Subtotal (1 pack of 15 units)*

R 269,10

(exc. VAT)

R 309,45

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 17.94R 269.10
30 - 75R 17.491R 262.37
90 - 225R 16.967R 254.51
240 - 465R 16.288R 244.32
480 +R 15.637R 234.56

*price indicative

Packaging Options:
RS stock no.:
218-3043
Mfr. Part No.:
IPD35N10S3L26ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

OptiMOS-T

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

71W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

6.22 mm

Height

2.41mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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