Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 IRFR540ZTRPBF

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Subtotal (1 pack of 20 units)*

R 138,92

(exc. VAT)

R 159,76

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
20 - 20R 6.946R 138.92
40 - 80R 6.772R 135.44
100 - 220R 6.569R 131.38
240 - 480R 6.306R 126.12
500 +R 6.054R 121.08

*price indicative

Packaging Options:
RS stock no.:
215-2599
Mfr. Part No.:
IRFR540ZTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

28.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

91W

Typical Gate Charge Qg @ Vgs

59nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET® Power MOSFET utilizes the latest 35A ID processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free and Halogen-Free

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