Infineon iPB Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

R 18 449,00

(exc. VAT)

R 21 216,00

(inc. VAT)

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  • 1,000 unit(s) shipping from 15 January 2026
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Units
Per unit
Per Reel*
1000 - 1000R 18.449R 18,449.00
2000 - 2000R 17.988R 17,988.00
3000 +R 17.448R 17,448.00

*price indicative

RS stock no.:
249-6901
Mfr. Part No.:
IPB35N10S3L26ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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