Infineon iPB Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 IPB35N10S3L26ATMA1

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Subtotal (1 pack of 2 units)*

R 27,05

(exc. VAT)

R 31,108

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 13.525R 27.05
10 - 98R 13.185R 26.37
100 - 248R 12.79R 25.58
250 - 498R 12.28R 24.56
500 +R 11.79R 23.58

*price indicative

Packaging Options:
RS stock no.:
249-6902
Mfr. Part No.:
IPB35N10S3L26ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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