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Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252

RS stock no.:: 214-8951
Mfr. Part No.:: AUIRFR540Z
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252

Image representative of range

Bulk discount available

Subtotal (1 tube of 75 units)*

R 1 299,60

(exc. VAT)

R 1 494,525

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 1,650 unit(s) shipping from 30 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
75 - 150	R 17.328	R 1,299.60
225 - 300	R 16.895	R 1,267.13
375 +	R 16.388	R 1,229.10

*price indicative

RS stock no.:: 214-8951
Mfr. Part No.:: AUIRFR540Z
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	28.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	39nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	91W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.22mm
	Height	2.39mm
	Width	6.73 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 28.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 39nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 91W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.22mm
	Height 2.39mm
	Width 6.73 mm
	Automotive Standard AEC-Q101

Datasheet - AUIRFR540Z

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Automotive Qualified

Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252

FREE delivery for orders over R 1,500.00

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