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Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1

RS stock no.:: 214-4364
Mfr. Part No.:: IPB017N10N5LFATMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1

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Subtotal (1 pack of 2 units)*

R 222,93

(exc. VAT)

R 256,37

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 1,662 unit(s) shipping from 01 June 2026

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Units	Per unit	Per Pack*
2 - 8	R 111.465	R 222.93
10 - 98	R 108.68	R 217.36
100 - 248	R 105.42	R 210.84
250 - 498	R 101.205	R 202.41
500 +	R 97.155	R 194.31

*price indicative

RS stock no.:: 214-4364
Mfr. Part No.:: IPB017N10N5LFATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	195nC
	Maximum Power Dissipation Pd	313W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	4.57mm
	Standards/Approvals	No
	Length	10.31mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 195nC
	Maximum Power Dissipation Pd 313W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 4.57mm
	Standards/Approvals No
	Length 10.31mm
	Automotive Standard No

IPB017N10N5LFATMA1 Datasheet

Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Summary of Features

•Combination of low R DS(on) and wide safe operating area (SOA)

•High max. pulse current

•High continuous pulse current

Benefits

•Rugged linear mode operation

•Low conduction losses

•Higher in-rush current enabled for faster start-up and shorter down time

Potential Applications

•Telecom

•Battery management

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