Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 120 V Enhancement, 7-Pin TO-263 IPB036N12N3GATMA1

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R 97,69

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1 - 24R 84.95
25 - 99R 82.83
100 - 499R 80.35
500 - 999R 77.14
1000 +R 74.05

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Packaging Options:
RS stock no.:
754-5428
Mfr. Part No.:
IPB036N12N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

158nC

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.57mm

Length

10.31mm

Width

9.45 mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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