Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1

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Subtotal (1 pack of 5 units)*

R 477,13

(exc. VAT)

R 548,70

(inc. VAT)

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  • 285 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 5R 95.426R 477.13
10 - 95R 93.04R 465.20
100 - 245R 90.248R 451.24
250 - 495R 86.638R 433.19
500 +R 83.172R 415.86

*price indicative

Packaging Options:
RS stock no.:
214-9009
Mfr. Part No.:
IPB024N10N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 5

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

100% avalanche tested

Qualified according to JEDEC for target applications

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