Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263
- RS stock no.:
- 214-4363
- Mfr. Part No.:
- IPB017N10N5LFATMA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 1000 units)*
R 50 550,00
(exc. VAT)
R 58 130,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
- 1,000 unit(s) ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 50.55 | R 50,550.00 |
| 2000 - 2000 | R 49.287 | R 49,287.00 |
| 3000 + | R 47.808 | R 47,808.00 |
*price indicative
- RS stock no.:
- 214-4363
- Mfr. Part No.:
- IPB017N10N5LFATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 313W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.31mm | |
| Width | 9.45mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 313W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.31mm | ||
Width 9.45mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPB017N10N5LFATMA1
Features and Benefits:
• 180A continuous drain current supporting heavy load currents
• 100V drain-source rating for high-voltage switching applications
• 313W power dissipation allowing sustained thermal load handling
• 195nC typical gate charge facilitating controlled gate-drive dynamics
• 20V gate tolerance permitting flexible gate-drive voltages
Applications
• Ideal for high-current synchronous rectification stages
• Used with motor drives requiring robust switching elements
• Can be used for power distribution in telecom equipment
• Appropriate for server power modules and datacentre supplies
What temperature range can it tolerate in operation?
What package should designers account for when laying out PCBs?
How many pins does the device provide for connection?
What type of channel does it use and how does that affect circuit design?
Related links
- Infineon OptiMOS Type N-Channel MOSFET 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1
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- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 IPB025N10N3GATMA1
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263
