Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263
- RS stock no.:
- 214-4363
- Mfr. Part No.:
- IPB017N10N5LFATMA1
- Manufacturer:
- Infineon
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R 50 550,00
(exc. VAT)
R 58 130,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,000 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 50.55 | R 50,550.00 |
| 2000 - 2000 | R 49.287 | R 49,287.00 |
| 3000 + | R 47.808 | R 47,808.00 |
*price indicative
- RS stock no.:
- 214-4363
- Mfr. Part No.:
- IPB017N10N5LFATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 313W | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 313W | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.31mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
Combining a low RDS(on) with a wide safe operating area (SOA)
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Summary of Features
•Combination of low R DS(on) and wide safe operating area (SOA)
•High max. pulse current
•High continuous pulse current
Benefits
•Rugged linear mode operation
•Low conduction losses
•Higher in-rush current enabled for faster start-up and shorter down time
Potential Applications
•Telecom
•Battery management
Related links
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