Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 120 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 1000 units)*

R 56 360,00

(exc. VAT)

R 64 810,00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +R 56.36R 56,360.00

*price indicative

RS stock no.:
911-0822
Mfr. Part No.:
IPB036N12N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

120V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

158nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Height

4.57mm

Width

9.45 mm

Standards/Approvals

No

Length

10.31mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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