Vishay SiDR170DP Type N-Channel MOSFET, 95 A, 100 V Enhancement, 8-Pin SO-8 SiDR170DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 312,91

(exc. VAT)

R 359,845

(inc. VAT)

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Last RS stock
  • Final 545 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5R 62.582R 312.91
10 - 95R 61.018R 305.09
100 - 495R 59.188R 295.94
500 - 995R 56.82R 284.10
1000 +R 54.548R 272.74

*price indicative

Packaging Options:
RS stock no.:
210-4955
Mfr. Part No.:
SiDR170DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

95A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiDR170DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

93nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.9mm

Width

4.9 mm

Height

0.51mm

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8DC package type.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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