Vishay SiDR220DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3
- RS stock no.:
- 204-7232
- Mfr. Part No.:
- SIDR220DP-T1-RE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 653,81
(exc. VAT)
R 751,88
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 30 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 65.381 | R 653.81 |
| 100 - 490 | R 63.746 | R 637.46 |
| 500 - 990 | R 61.834 | R 618.34 |
| 1000 - 1490 | R 59.361 | R 593.61 |
| 1500 + | R 56.987 | R 569.87 |
*price indicative
- RS stock no.:
- 204-7232
- Mfr. Part No.:
- SIDR220DP-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SO-8 | |
| Series | SiDR220DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SO-8 | ||
Series SiDR220DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 25 V (D-S) MOSFET has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
Related links
- Vishay SiDR220DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8
- Vishay SiDR140DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8 SIDR140DP-T1-RE3
- Vishay SiDR392DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIDR392DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIR680DP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIDR638DP-T1-RE3
- Vishay SiDR140DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8
- Vishay SiDR392DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8