Vishay SiDR392DP Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIDR392DP-T1-RE3

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Subtotal (1 pack of 20 units)*

R 840,86

(exc. VAT)

R 966,98

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80R 42.043R 840.86
100 - 480R 40.992R 819.84
500 - 980R 39.762R 795.24
1000 - 1480R 38.172R 763.44
1500 +R 36.645R 732.90

*price indicative

Packaging Options:
RS stock no.:
204-7234
Mfr. Part No.:
SIDR392DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

SiDR392DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.62mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

188nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.15 mm

Standards/Approvals

No

Length

6.15mm

Automotive Standard

No

The Vishay N-Channel 30 V (D-S) MOSFET has a Top side cooling feature provides additional venue for thermal transfer. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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