Vishay Dual SiSF06DN 2 Type N-Channel MOSFET, 101 A, 30 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

R 27 615,00

(exc. VAT)

R 31 758,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +R 9.205R 27,615.00

*price indicative

RS stock no.:
204-7259
Mfr. Part No.:
SISF06DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

101A

Maximum Drain Source Voltage Vds

30V

Series

SiSF06DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

69.4W

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Width

3.3 mm

Height

0.73mm

Standards/Approvals

No

Length

3.3mm

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Common Drain Dual N-Channel 30 V (S1-S2) MOSFET is an integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.

Very low source-to-source on resistance

TrenchFET Gen IV power MOSFET

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