Vishay Dual SiSF06DN 2 Type N-Channel MOSFET, 101 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISF06DN-T1-GE3
- RS stock no.:
- 204-7260
- Mfr. Part No.:
- SISF06DN-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 292,56
(exc. VAT)
R 336,44
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 27 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 14.628 | R 292.56 |
| 100 - 480 | R 14.262 | R 285.24 |
| 500 - 980 | R 13.834 | R 276.68 |
| 1000 - 1480 | R 13.281 | R 265.62 |
| 1500 + | R 12.75 | R 255.00 |
*price indicative
- RS stock no.:
- 204-7260
- Mfr. Part No.:
- SISF06DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSF06DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0045Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 69.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 0.73mm | |
| Width | 3.3 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSF06DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0045Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 69.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 0.73mm | ||
Width 3.3 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Common Drain Dual N-Channel 30 V (S1-S2) MOSFET is an integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.
Very low source-to-source on resistance
TrenchFET Gen IV power MOSFET
Related links
- Vishay Dual SiSF06DN 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin PowerPAK 1212-8 Dual
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 25 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SIS9634LDN 4 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS141ELNW-T1_GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW