Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8SCD Vishay SiSF20DN-T1-GE3
- RS stock no.:
- 188-4891
- Mfr. Part No.:
- SiSF20DN-T1-GE3
- Manufacturer:
- Vishay
Subtotal (1 reel of 3000 units)**
R 38 964 00
(exc. VAT)
R 44 808 00
(inc. VAT)
On back order for despatch 2025/07/17*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Reel** |
|---|---|---|
| 3000 + | R 12,988 | R 38 964,00 |
**price indicative
- RS stock no.:
- 188-4891
- Mfr. Part No.:
- SiSF20DN-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 52 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerPAK 1212-8SCD | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 18 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 69.4 W | |
| Transistor Configuration | Common Drain | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerPAK 1212-8SCD | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 18 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 69.4 W | ||
Transistor Configuration Common Drain | ||
Maximum Gate Source Voltage ±20 V | ||
Width 3.4mm | ||
Length 3.4mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
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