Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET, 13.1 A, 100 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 5 units)*

R 165,68

(exc. VAT)

R 190,53

(inc. VAT)

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Last RS stock
  • Final 15,885 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 45R 33.136R 165.68
50 - 95R 32.308R 161.54
100 - 245R 31.338R 156.69
250 - 995R 30.084R 150.42
1000 +R 28.88R 144.40

*price indicative

Packaging Options:
RS stock no.:
228-2827
Mfr. Part No.:
Si7252ADP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13.1A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

100V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13.1nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual N Channel Mosfet

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

PWM optimized

100 % Rg and UIS tested

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