Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8 SiR626ADP-T1-RE3
- RS stock no.:
- 204-7200
- Mfr. Part No.:
- SiR626ADP-T1-RE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 317,05
(exc. VAT)
R 364,61
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 28 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 31.705 | R 317.05 |
| 100 - 490 | R 30.912 | R 309.12 |
| 500 - 990 | R 29.985 | R 299.85 |
| 1000 - 1490 | R 28.786 | R 287.86 |
| 1500 + | R 27.635 | R 276.35 |
*price indicative
- RS stock no.:
- 204-7200
- Mfr. Part No.:
- SiR626ADP-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 165A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiR626ADP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.26mm | |
| Width | 1.12 mm | |
| Height | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 165A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiR626ADP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.75mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.26mm | ||
Width 1.12 mm | ||
Height 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET is tuned for the lowest RDS - Qoss FOM.
Package Power PAK SO-8
TrenchFET Gen IV power MOSFET
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