Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8 SiR626ADP-T1-RE3

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Subtotal (1 pack of 10 units)*

R 321,88

(exc. VAT)

R 370,16

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90R 32.188R 321.88
100 - 490R 31.383R 313.83
500 - 990R 30.442R 304.42
1000 - 1490R 29.224R 292.24
1500 +R 28.055R 280.55

*price indicative

Packaging Options:
RS stock no.:
204-7200
Mfr. Part No.:
SiR626ADP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

165A

Maximum Drain Source Voltage Vds

60V

Series

SiR626ADP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.75mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

83nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Height

6.25mm

Standards/Approvals

No

Length

5.26mm

Width

1.12 mm

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET is tuned for the lowest RDS - Qoss FOM.

Package Power PAK SO-8

TrenchFET Gen IV power MOSFET

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