Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3

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Subtotal (1 pack of 20 units)*

R 197,60

(exc. VAT)

R 227,20

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 280R 9.88R 197.60
300 - 580R 9.633R 192.66
600 - 1480R 9.344R 186.88
1500 - 2980R 8.97R 179.40
3000 +R 8.611R 172.22

*price indicative

Packaging Options:
RS stock no.:
814-1314
Mfr. Part No.:
SISS23DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

195nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

8 V

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

150°C

Length

3.3mm

Height

0.78mm

Standards/Approvals

No

Width

3.3 mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


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