Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
- RS stock no.:
- 814-1314
- Mfr. Part No.:
- SISS23DN-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 189,10
(exc. VAT)
R 217,46
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,900 unit(s) shipping from 15 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 280 | R 9.455 | R 189.10 |
| 300 - 580 | R 9.219 | R 184.38 |
| 600 - 1480 | R 8.942 | R 178.84 |
| 1500 - 2980 | R 8.585 | R 171.70 |
| 3000 + | R 8.241 | R 164.82 |
*price indicative
- RS stock no.:
- 814-1314
- Mfr. Part No.:
- SISS23DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Height | 0.78mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.3mm | ||
Length 3.3mm | ||
Height 0.78mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
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