Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 5 units)*

R 232,67

(exc. VAT)

R 267,57

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 46.534R 232.67
25 - 95R 45.37R 226.85
100 - 495R 44.008R 220.04
500 - 995R 42.248R 211.24
1000 +R 40.558R 202.79

*price indicative

Packaging Options:
RS stock no.:
188-5025
Mfr. Part No.:
SiSF20DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

69.4W

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Common Drain

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Length

3.4mm

Width

3.4 mm

Height

0.75mm

Number of Elements per Chip

2

Automotive Standard

No

Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low source-to-source on resistance

Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

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