Vishay Dual SI7216DN N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack SI7216DN-T1-E3
- RS stock no.:
- 180-7922
- Mfr. Part No.:
- SI7216DN-T1-E3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 183,89
(exc. VAT)
R 211,475
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,915 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 36.778 | R 183.89 |
| 50 - 95 | R 35.858 | R 179.29 |
| 100 - 495 | R 34.782 | R 173.91 |
| 500 - 995 | R 33.39 | R 166.95 |
| 1000 + | R 32.054 | R 160.27 |
*price indicative
- RS stock no.:
- 180-7922
- Mfr. Part No.:
- SI7216DN-T1-E3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPack | |
| Series | SI7216DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 20.8W | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Width | 3.4mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPack | ||
Series SI7216DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 20.8W | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Width 3.4mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SI7216DN is a dual N-channel MOSFET having drain to source(Vds) voltage of 40V.The gate to source voltage(VGS) is 20V. It is having power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.032ohms at 10VGS and 0.039ohms at 4.5VGS. Maximum drain current 6A.
Trench FET power MOSFET
Low thermal resistance Power PAK package with small size and low 1.07 mm profile
100 % Rg and UIS tested
Compliant to RoHS directive 2002/95/EC
Related links
- Vishay Dual SI7216DN Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SI4946BEY-T1-E3
- Vishay Dual TrenchFET 2 Type P 5.3 A 8-Pin SO-8