Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack
- RS stock no.:
- 180-7324
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Manufacturer:
- Vishay
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View bulk pricing optionsSubtotal (1 reel of 3000 units)*
R 85 215,00
(exc. VAT)
R 97 998,00
(inc. VAT)
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- Shipping from 27 October 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 28.405 | R 85,215.00 |
| 6000 - 6000 | R 27.694 | R 83,082.00 |
| 9000 + | R 26.864 | R 80,592.00 |
*price indicative
- RS stock no.:
- 180-7324
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPack | |
| Series | SI7956DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.5W | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPack | ||
Series SI7956DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.5W | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SI7956DP Series MOSFET, 150V Drain Source Voltage, 4.1A Continuous Drain Current - SI7956DP-T1-GE3
This dual N-channel MOSFET is a surface-mount switching device designed for high-voltage power applications in industrial and electronic systems. It delivers controlled conduction for load switching and power conversion tasks, operating across a wide ambient range and intended for board-level integration where compact, dual-transistor solutions are required.
Features and Benefits:
• 150V drain tolerance enables high-voltage switching capabilities • 4.1A continuous drain current supports moderate load currents • 0.1Ω Rds(on) minimises conduction losses for improved efficiency • 17nC typical gate charge allows predictable switching behaviour • 3.5W power dissipation manages thermal load in Compact assemblies
Applications
• Suitable for DC-DC converter stages in automation equipment • Ideal for motor driver half-bridge circuits in control panels • Used for switched-mode power supplies in industrial electronics • Can be used for power distribution switches on Compact PCBs
What are the allowable gate and drain voltages for safe operation?
The gate may be driven up to 20V and the device withstands drain-source voltages up to 150V.
What thermal extremes can the device tolerate during operation?
It is rated for continuous use from -50°C up to a maximum operating temperature of 150°C.
How many pins and what package type should be expected for PCB layout?
The component is supplied as an 8-pin PowerPack surface-mount device suited to standard land patterns.
How does the dual configuration affect circuit implementation?
Two transistors are provided in a single package, enabling Compact paired-switch arrangements and simplified board routing.
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