Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack
- RS stock no.:
- 180-7324
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionSubtotal (1 reel of 3000 units)*
R 85 215,00
(exc. VAT)
R 97 998,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 05 October 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 28.405 | R 85,215.00 |
| 6000 - 6000 | R 27.694 | R 83,082.00 |
| 9000 + | R 26.864 | R 80,592.00 |
*price indicative
- RS stock no.:
- 180-7324
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SI7956DP | |
| Package Type | PowerPack | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 3.5W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SI7956DP | ||
Package Type PowerPack | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 3.5W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dual MOSFET for space savings
• Halogen free
• Lead (Pb) free component
• Low on-resistance in new low thermal resistance PowerPAK package
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Half bridge and forward converters
• High efficiency primary side switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
Related links
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- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3
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- Vishay Dual SI7216DN Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7216DN Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPack SI7216DN-T1-E3
- Vishay Dual SIA931DJ Type P-Channel MOSFET -30 V Enhancement, 6-Pin PowerPack SIA931DJ-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8