Vishay Dual SIA931DJ Type P-Channel MOSFET, -4.5 A, -30 V Enhancement, 6-Pin PowerPack

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Subtotal (1 reel of 3000 units)*

R 10 911,00

(exc. VAT)

R 12 549,00

(inc. VAT)

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Temporarily out of stock
  • 3,000 unit(s) shipping from 04 December 2026
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Units
Per unit
Per Reel*
3000 - 3000R 3.637R 10,911.00
6000 - 6000R 3.546R 10,638.00
9000 +R 3.44R 10,320.00

*price indicative

RS stock no.:
180-7340
Mfr. Part No.:
SIA931DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-4.5A

Maximum Drain Source Voltage Vds

-30V

Package Type

PowerPack

Series

SIA931DJ

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.1nC

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

2.15mm

Standards/Approvals

No

Height

0.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay SIA931DJ is a dual P-channel MOSFET having drain to source(Vds) voltage of -30V.The gate to source voltage(VGS) is 20V. It is having Power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 6VGS. Maximum drain current -4.5A.

Trench FET Gen III power MOSFET

Thermally enhanced Power PAK SC-70 package small footprint area low on resistance

100 % Rg tested

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